



@article {2591,
	title = {In situ characterization of the p-Si/NH                    4F interface during dissolution in the current oscillations regime
},
	journal = {Journal of the Electrochemical SocietyJ Electrochem Soc},
	volume = {145},
	year = {1998},
	note = {Cited By (since 1996): 31Export Date: 21 November 2012Source: ScopusCODEN: JESOALanguage of Original Document: EnglishCorrespondence Address: Cattarin, S.; Ist. Polarografia ed E., C. N. R., 35100 Padova, ItalyReferences: Zhang, X.G., Collins, S.D., Smith, R.L., (1989) This Journal, 136, p. 1561;Smith, R.L., Collins, S.D., (1992) J. Appl. Phys., 71, pp. R1; 
Jung, K.H., Shih, S., Kwong, D.L., (1993) This Journal, 140, p. 3046; 
Lewerenz, H.J., Stumper, J., Pettenkofer, C., Greef, R., (1989) Electrochim. Acta, 34, p. 1729; 
Bitzer, T., Lewerenz, H.J., (1992) Surf. Sci., 269-270, p. 886; 
Lewerenz, H.J., Bitzer, T., Gruyters, M., Jacobi, K., (1993) This Journal, 140, pp. L44; 
Lewerenz, H.J., (1992) Electrochim. Acta, 37, p. 847; 
Chazalviel, J.-N., (1992) Electrochim. Acta, 37, p. 865; 
Ozanam, F., Chazalviel, J.-N., (1993) J. Electron Spec. Rel. Phenomena, 64-65, p. 395; 
Ozanam, F., Da Fonseca, C., Chazalviel, J.-N., (1995) Proc. Indian Acad. Sci. (Chem. Sci.), 107, p. 709; 
Da Fonseca, C., Ozanam, F., Chazalviel, J.-N., (1996) Surface Science, 365, p. 1; 
Stumper, J., Peter, L.M., (1991) J. Electroanal. Chem., 309, p. 325; 
Stumper, J., Greef, R., Peter, L.M., (1991) J. Electroanal. Chem., 310, p. 445; 
Blackwood, D.J., Borazio, A., Greef, R., Peter, L.M., Stumper, J., (1992) Electrochim. Acta, 37, p. 889; 
Gerischer, H., L{\"u}ke, M., (1988) Ber. Bunsenges. Phys. Chem., 92, p. 573; 
Chazalviel, J.-N., Ozanam, F., Etman, M., Paolucci, F., Peter, L.M., Stumper, J., (1992) J. Electroanal. Chem., 327, p. 343; 
Aggour, M., Giersig, M., Lewerenz, H.-J., (1995) J. Electroanal. Chem., 383, p. 67; 
Lehmann, V., (1996) This Journal, 143, p. 1313; 
Lewerenz, H.J., Aggour, M., (1993) J. Electroanal. Chem., 351, p. 159; 
Chazalviel, J.-N., Ozanam, F., (1992) This Journal, 139, p. 2501; 
Cattarin, S., Peter, L.M., Jason Riley, D., (1997) J. Phys. Chem. B, 101, p. 4071; 
Kirk, C.T., (1988) Phys. Rev. B, 38, p. 1255; 
Schlicht{\"o}rl, G., Peter, L.M., (1994) This Journal, 141, pp. L171; 
Myamlin, V.A., Pleskov, Y.V., (1967) Electrochemistry of Semiconductors, p. 213. , Plenum Press, New York; 
Chazalviel, J.-N., Da Fonseca, C., Ozanam, F., To be publishedPankove, J.I., (1971) Optical Processes in Semiconductors, p. 75. , Prentice-Hall Inc., Englewood Cliffs, NJ; 
Tardella, A., Chazalviel, J.-N., (1985) Phys. Rev. B, 32, p. 2439; 
Peter, L.M., Schlichth{\"o}rl, G., In preparationRappich, J., Timoshenko, V.Y., Dittrich, T., (1997) Ber. Bunsenges. Phys. Chem., 101, p. 139; 
Matsumura, M., Morrison, S.R., (1983) J. Electroanal. Chem., 147, p. 157; 
Franck, U.F., (1974) Faraday Symp. Chem. Soc., 9, p. 137
},
	month = {1998///},
	pages = {498 - 502},
	abstract = {Several physicochemical properties of the p-Si/NH                        4F interface have been monitored by in situ techniques in the regime of current oscillations. Comparison of evolution of infrared absorption, microwave reflectivity, electrode admittance, hydrogen evolution, and electron injection rate shows interesting correlations. An integrated description of the processes involved is attempted on the basis of the current models for the Si/acidic fluoride interface.
},
	keywords = {Ammonium compounds, Ammonium fluoride, Dissolution, Electric currents, Electric Impedance, Electrochemical electrodes, Electron injection rate, Hydrogen, Interfaces (materials), Microwave reflectivity, Porous silicon},
	isbn = {00134651 (ISSN)},
	url = {http://www.scopus.com/inward/record.url?eid=2-s2.0-0031996606\&partnerID=40\&md5=9b455077d4ee25d640363197ec7367d4},
	author = {Cattarin, S. and Chazalviel, J.-N. and Da Fonseca, C. and Ozanam, F. and Peter, L.M. and Schlichth{\"o}rl, G. and Stumper, J.}
}
