| Title | In situ characterization of the p-Si/NH 4F interface during dissolution in the current oscillations regime
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| Publication Type | Journal Article |
| 1998 |
| Authors | Cattarin, S, Chazalviel, J-N, Da Fonseca, C, Ozanam, F, Peter, LM, Schlichthörl, G, Stumper, J |
| Journal | Journal of the Electrochemical SocietyJ Electrochem Soc |
| Volume | 145 |
| Issue | 2 |
| Pagination | 498 - 502 |
| Date Published | 1998/// |
| 00134651 (ISSN) |
| Ammonium compounds, Ammonium fluoride, Dissolution, Electric currents, Electric Impedance, Electrochemical electrodes, Electron injection rate, Hydrogen, Interfaces (materials), Microwave reflectivity, Porous silicon |
| Several physicochemical properties of the p-Si/NH 4F interface have been monitored by in situ techniques in the regime of current oscillations. Comparison of evolution of infrared absorption, microwave reflectivity, electrode admittance, hydrogen evolution, and electron injection rate shows interesting correlations. An integrated description of the processes involved is attempted on the basis of the current models for the Si/acidic fluoride interface.
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| http://www.scopus.com/inward/record.url?eid=2-s2.0-0031996606&partnerID=40&md5=9b455077d4ee25d640363197ec7367d4 |
